IRFP250 200V 30AMP 3 POLE SEMICONDUCTOR SILICON TRANSISTOR

 300

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Description

IRFP250 is an N channel MOSFET or power field effect transistor available in TO-247 and some manufacturers also make it in TO-3P transistor package. The transistor has many features such as low drain to source on resistance only 0.085 Ohm, very fast switching speed of Nanosecond which makes it ideal to use in applications where high speed switching is required, High input impedance, it is simple to drive due to which it can be operated directly from microcontroller or ICs outputs, voltage control, temperature stable etc. All these and other features makes this device reliable to use for commercial purposes.

Regarding to the specifications of the transistor the maximum drain to source voltage is 200V, maximum continuous drain current is 30A, maximum power dissipation is 180W. The primary applications of the transistor are high speed switching applications, UPS systems, AC to DC converters, DC to DC converters, telecommunication applications, lighting equipment etc..

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